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GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD

Name: GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD
Brand: Ningbo Baosi Energy Equipment Co., Ltd.
SKU: GRM1201
Price: 10,500.00 USD
Availability: InStock

Détails du produit:

Lieu d'origine:	Chine
Nom de marque:	Baosi
Certification:	CE
Numéro de modèle:	GRM1201

Informations détaillées

Lieu d'origine:

Chine

Nom de marque:

Baosi

Certification:

Numéro de modèle:

GRM1201

Vitesse de pompage:

1200 m3/h

Pression ultime:

≤0,15 Pa

Puissance du moteur:

1,9+1,9 kW

Tension:

380 V/triphasé

Entrée:

ISO160

Sortie:

KF25

Bruit:

≤63 dB(A)

Poids:

260 kg

Dimensions:

865×344×751 millimètres

Eau de refroidissement:

0,1-0,6 MPa, ≥4 L/min

Purge N2:

0,2-0,6 MPa, 12-50 L/min

Mettre en évidence:

High Light

Mettre en évidence:

high speed roots vacuum pump

1200m3h dry vacuum pump

PECVD MOCVD process vacuum

Informations commerciales

Quantité de commande min:

1 ensemble

Prix:

USD 8500-12500/Set

Détails d'emballage:

Emballage de caisse en bois standard d'exportation

Délai de livraison:

15-30 jours ouvrables

Conditions de paiement:

T/T, L/C

Capacité d'approvisionnement:

50 ensembles/mois

Description du produit

GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free High-Speed Vacuum Pump for Semiconductor PECVD MOCVD

GRM1201 Multi-Stage Roots Dry Vacuum Pump — 1200 m³/h High-Speed Solution

The GRM1201 is a high-speed multi-stage roots dry vacuum pump delivering 1200 m³/h pumping speed with ultimate pressure of ≤0.15 Pa. Sharing the same compact platform as the GRM601 (865 * 344 * 751 mm, 260 kg) but with ISO160 inlet for higher throughput, it excels in PECVD, MOCVD and demanding semiconductor clean and medium process applications.

Key Features

High-Speed Multi-Stage Roots: 1200 m³/h with low power consumption
Dual Motor Efficiency: 1.9+1.9 kW permanent magnet synchronous motors
Excellent Ultimate Pressure: ≤0.15 Pa meets demanding process requirements
Ultra-Quiet: ≤63 dB(A) — cleanroom-compatible noise level
Large ISO160 Inlet: Handles high gas throughput for production-scale applications
Oil-Free Clean Vacuum: No oil contamination for sensitive semiconductor processes
Superior Dust Handling: Advanced rotor design for particle-rich environments
Compact Platform: Same footprint as GRM601 — easy line integration
Triple Sealing System: Lip seal + labyrinth + nitrogen purge guarantee oil-free vacuum
Smart Connectivity: I/O and RS485 (Modbus) for remote factory integration

Technical Specifications

Model	GRM1201
Pumping Speed	1200 m³/h
Ultimate Pressure (w/o purge)	≤0.15 Pa
Motor Power	1.9 + 1.9 kW
Voltage	380V (3-Phase)
Inlet Connection	ISO160
Outlet Connection	KF25
Noise Level	≤63 dB(A)
Weight	260 kg
Dimensions (LWH)	865 * 344 * 751 mm
Cooling Water Pressure	0.1–0.6 MPa
Cooling Water Flow	≥4 L/min
N₂ Purge Pressure	0.2–0.6 MPa
N₂ Purge Flow	12–50 L/min
Operating Temperature	5–40°C; ≤90% RH

Applications

Semiconductor: PECVD, MOCVD, SACVD, RTP, HDP-CVD, ALD, Metal Etch, Silicon Etch
Photovoltaic: High-throughput solar cell manufacturing lines
Lithium Battery: Production-scale cell drying and electrolyte processing
Flat Panel Display: OLED and LCD manufacturing

Balises:

GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD

High Light

Mettre en évidence:

high speed roots vacuum pump

1200m3h dry vacuum pump

PECVD MOCVD process vacuum

pompe à vide turbomoléculaire,

Pompes à vide élevé,

high speed roots vacuum pump

Pompe à vide sèche refroidie à l'eau 1200 m³/h, ≤0,15 Pa, 1,9 kW, GRM1201

Pompes à vide sec refroidies à l'eau 200m3/h,≤ 0,5Pa,1.9kw, GRM201

Pompes à vide sec refroidies à l'eau 600m3/h,≤ 0,15Pa,1.9kw, GRM601